Search results for "Quasi Fermi level"
showing 9 items of 9 documents
Effects of Conduction Band Structure and Dimensionality of the Electron Gas on Transport Properties of InSe under Pressure
1996
We report Hall effect and resistivity measurements in InSe under pressure. The electron concentration strongly decreases under pressure in samples exhibiting 3D transport behaviour. This is explained by the existence of an excited minimum in the conduction band moving to lower energies under pressure. The related impurity level traps electrons as it reaches the band gap and approaches the Fermi level. In samples exhibiting 2D behaviour the electron concentration remains constant. This behaviour, together with the pressure dependence of the Hall mobility, is consistent with a previous model which considers high mobility 3D electrons and low mobility 2D electrons to contribute to charge trans…
Effects of Nid-levels on the electronic band structure of NixCd1-xO semiconducting alloys
2017
NixCd1-xO has a ∼3 eV band edge offset and bandgap varying from 2.2 to 3.6 eV, which is potentially important for transparent electronic and photovoltaic applications. We present a systematic study of the electronic band structure of NixCd1-xO alloys across the composition range. Ion irradiation of alloy samples leads to a saturation of the electron concentration associated with pinning of the Fermi level (EF) at the Fermi stabilization energy, the common energy reference located at 4.9 eV below the vacuum level. The composition dependence of the pinned EF allows determination of the conduction band minimum (CBM) energy relative to the vacuum level. The unusually strong deviation of the CBM…
Band Alignments in InxGa1–xP/GaAs Heterostructures Investigated by Pressure Experiments
2000
6 páginas, 3 figuras.
Hall effect and electronic structure of films
2010
Abstract Tunneling experiments have shown that in order to retain half-metallicity at room temperature not only a large gap is required but also a Fermi energy considerably distant from the minority band edges. We correlate the position of the Fermi energy in the spin minority gap obtained from band structure calculations to Hall effect experiments. As a model system we chose Co 2 Fe x Mn 1 - x Si , where the Fermi energy was calculated to move from the valence band edge of the minority states to the conduction band edge with increasing x . On high quality laser ablated epitaxial films we observe a sign change of both the normal and the anomalous Hall effect with doping. The experimental da…
Band structure of indium selenide investigated by intrinsic photoluminescence under high pressure
2004
This paper reports on photoluminescence experiments in $n$-type indium selenide $(T=300\phantom{\rule{0.3em}{0ex}}\mathrm{K})$ under hydrostatic pressure up to 7 GPa at low and high excitation densities. Photoluminescence measurements at low excitation density exhibit a broad band around the energy of the direct band gap of $\mathrm{InSe}$ and with the same pressure dependence. The reversible increase of its linewidth above $1\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$ is associated to a direct-to-indirect band-gap crossover between valence band maxima. The reversible decrease of its intensity above $4\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$ is interpreted as evidence of a direct-to-indirect b…
Surface band-gap narrowing in quantized electron accumulation layers.
2010
An energy gap between the valence and the conduction band is the defining property of a semiconductor, and the gap size plays a crucial role in the design of semiconductor devices. We show that the presence of a two-dimensional electron gas near to the surface of a semiconductor can significantly alter the size of its band gap through many-body effects caused by its high electron density, resulting in a surface band gap that is much smaller than that in the bulk. Apart from reconciling a number of disparate previous experimental findings, the results suggest an entirely new route to spatially inhomogeneous band-gap engineering.
Theoretical and Experimental Study of the Crystal Structures, Lattice Vibrations, and Band Structures of Monazite-Type PbCrO4, PbSeO4, SrCrO4, and Sr…
2015
The crystal structures, lattice vibrations, and electronic band structures of PbCrO4, PbSeO4, SrCrO4, and SrSeO4 were studied by ab initio calculations, Raman spectroscopy, X-ray diffraction, and optical-absorption measurements. Calculations properly describe the crystal structures of the four compounds, which are isomorphic to the monazite structure and were confirmed by X-ray diffraction. Information is also obtained on the Raman- and IR-active phonons, with all of the vibrational modes assigned. In addition, the band structures and electronic densities of states of the four compounds were determined. All are indirect-gap semiconductors. In particular, chromates are found to have band gap…
Metal valence states inEu0.7NbO3,EuNbO3,andEu2Nb5O9by TB-LMTO-ASA band-structure calculations and resonant photoemission spectroscopy
1998
The electronic structures of ${\mathrm{Eu}}_{2}{\mathrm{Nb}}_{5}{\mathrm{O}}_{9},$ ${\mathrm{EuNbO}}_{3},$ and ${\mathrm{Eu}}_{0.7}{\mathrm{NbO}}_{3}$ have been investigated by photoemission and total-yield spectroscopy with synchrotron radiation, and in the case of ${\mathrm{Eu}}_{2}{\mathrm{Nb}}_{5}{\mathrm{O}}_{9}$ by tight-binding linear muffin-tin orbital (LMTO) band-structure calculations. A central question for reduced europium niobates is that of the valence of Eu and Nb. Both europium and niobium atoms can appear in different valence states so that various electronic configurations in the title compounds are possible. For this reason, the valence band was studied by the resonant Eu…
Valence instabilities and inhomogeneous mixed valence in some ternary europium compounds
1997
Abstract Photoemission spectra and TB-LMTO-ASA band structure calculations of some mixed valency europium compounds hve been studied. The band structures are compared with the band structures of the isostructural lanthanum and strontium compounds. Surprisingly a 4f density of states in the vicinity of the Fermi level is observed in inhomogenous mixed valency EuPd 3 B, Eu 3 S 4 , and EuPdP. Indeed a van Hove Singularity (vHS) derived from the d states of La and Pd or p states of boron or phosphorous are found in La 3 S 4 , LaPd 3 B and SrPdP. The valence instability in the Eu compounds is thus not necessarily due to Eu 4f states. The results also provide some ground for the assumption that i…